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| S22MD2 S22MD2 s Features 1. Long distance between anode and cathode of photothyristor on the output side : 5.08mm 2. High repetitive peak OFF-state voltage ( VDRM : MIN. 600V ) 3. Low trigger current ( IFT : MAX. 8mA at R G = 20k ) 4. High isolation voltage between input and output ( Viso : 5 000V rms ) * S22MD2 is for 200V line. Photothyristor Coupler s Outline Dimensions 5.08 0.25 7 2.54 0.25 6 5 6.50.5 ( Unit : mm ) Internal connection diagram 7 6 5 S22MD2 Anode mark 1 0.8 0.2 2 3 4 1 2 3 4 1.2 0.3 9.22 0.5 0.85 0.2 7.62 0.3 3.5 0.5 3.0 0.5 0.50.1 0.5TYP. s Applications 1. ON-OFF operation for a low power load 2. For triggering high power thyristor and triac 0.26 0.1 : 0 to 13 5 Gate 6 Cathode 7 Anode 1 4 NC 2 Anode 3 Cathode s Absolute Maximum Ratings Input Parameter Forward current Reverse voltage RMS ON-state current 1 Peak one cycle surge current 2 Repetitive peak OFF-state voltage 2 Repetitive peak reverse voltage 3 Isolation voltage Operating temperature Storage temperature 4 Soldering temperature Symbol IF VR IT I surge VDRM VRRM Viso T opr T stg T sol Rating 50 6 200 2 600 600 5 000 - 30 to + 100 - 40 to + 125 260 ( Ta = 25C ) Unit mA V mArms A V V Vrms C C C Output 1 50Hz, sine wave 2 R G = 20k 3 40 to 60% RH, AC for 1 minute 4 For 10 seconds " In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device." S22MD2 s Electro-optical Characteristics Input Parameter Forward voltage Reverse current Repetitive peak OFF-state current Repetitive peak reverse current ON-state voltage Holding current Critical rate of rise of OFF-state voltage Minimum trigger current Isolation resistance Turn-on time Symbol VF IR I DRM I RRM VT IH dV/dt I FT R ISO t on Conditions IF = 30mA VR = 4V VDRM = Rated, R G = 20k VRRM = Rated, R G = 20k IT = 200mA VD = 6V, R G = 20k VDRM = 1/ 2 Rated, RG = 20k V D = 6V, R L = 100 , R G = 20k DC500V, 40 to 60% RH VD = 6V, RG = 20k , R L = 100 , I F = 30mA MIN. 3 5x 1010 TYP. 1.2 1.0 0.3 6 1011 20 ( Ta = 25C ) MAX. 1.4 10-5 10-6 10-6 1.4 1 8 50 Unit V A A A V mA V/ s mA s Output Transfercharacteristics Fig. 1 RMS ON-state Current vs. Ambient Temperature Fig. 2 Forward Current vs. Ambient Temperature 70 60 Forward current I F ( mA ) 50 40 30 20 10 200 RMS ON-state current I T ( mA rms ) 100 0 - 30 0 20 40 60 80 Ambient temperature T a ( C ) 100 0 - 30 0 25 50 75 100 Ambient temperature T a ( C ) 125 Fig. 3 Forward Current vs. Forward Voltage 500 200 Forward current I F ( mA ) 100 50 20 10 5 2 1 0 0.5 1.0 1.5 2.0 2.5 Forward voltage V F ( V ) 3.0 Fig. 4 Minimum Trigger Current vs. Ambient Temperature 12 V D = 6V R L = 100 Minimum trigger current I FT ( mA ) 10 R G = 10k T a = 75C 50C 25C 0C - 25C 8 20k 6 50k 4 2 0 - 30 0 20 40 60 80 Ambient temperature T a ( C ) 100 S22MD2 Fig. 5 Minimum Trigger Current vs. Gate Resistance 100 50 V D = 6V R L = 100 T a = 25C Fig. 6 Break Over Voltage vs. Ambient Temperature 900 800 Break over voltage V BO ( V ) 700 600 500 400 300 200 100 R G = 10k Minimum trigger current I FT ( mA ) 20k 50k 20 10 5 2 1 1 2 5 10 20 50 Gate resistance R G ( k ) 100 200 0 - 30 - 20 0 20 40 60 80 100 120 Ambient temperature T a ( C ) Fig. 7 Critical Rate of Rise of OFF-state Voltage vs. Ambient Temperature 100 R G = 20k Critical rate of rise of OFF-state voltage dV/dt ( V/ s ) 50 V DRM = 1/ 2 Rated Fig. 8 Holding Current vs. Ambient Temperature 1 V D = 6V 0.5 Holding current I H ( mA ) RG = 10k 0.2 0.1 0.05 20 10 5 20k 50k 2 1 0.02 0.01 - 30 0 20 40 60 Ambient temperature T a 80 ( C ) 100 0 20 40 60 80 Ambient temperature T a ( C ) 100 Fig. 9 Repetitive Peak OFF-state Current vs. Ambient Temperature 5 Repetitive peak OFF-state current I DRM ( A ) V DRM = Rated 2 R G = 20k 10 - 6 5 2 10 - 7 5 2 10 - 8 5 2 0 20 40 60 80 Ambient temperature T a ( C ) 100 S22MD2 s Basic Operation Circuit Medium/High Power Thyristor Drive Circuit 1 + VCC 2 3 VIN 4 7 ZS 6 5 CG RG Load AC 100V, 200V ZS : Snubber circuit Medium/High Power Triac Drive Circuit ( Zero-cross Operation ) 1 + VCC 2 7 Load AC 100V, 200V 3 VIN 4 6 5 RG CG q Please refer to the chapter " Precautions for Use" ( Page 78 to 93 ) . |
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